![transistor cross references transistor cross references](https://alltransistors.com/adv/pdfdatasheet_inchange_semiconductor/image/2sa766_0001.jpg)
Various groups have conducted many studies, and the ADG structure can be a great solution to overcome the RT of 1T-DRAMs 5. The stronger electric fields accelerate the recombination/generation process of the excess holes, resulting in shorter RTs in scaling of the 1T-DRAM. However, the smaller sizes of these devices tend to limit their retention characteristics due to the stronger electric field between the body and the source/drain junction. The 1T-DRAM has the advantages of being easy to manufacture and having excellent logic device compatibility 1, 2, 3, 4, 5. The 1T-DRAM operates without the use of external capacitors, instead of relying on the floating body effect. Recently, due to the complexity of the conventional DRAM’s capacitor fabrication, the 1T-DRAM has attracted great attention as a replacement for the conventional DRAM. The proposed 3-D stacked ADG 1 T-DRAM helps implement a high-reliability single-cell memory device. As a result of the 3-D stacked structure, the averaging effect occurs, which greatly aids in improving the reliability of the memory performances as well as the transfer characteristics of 1 T-DRAMs depending on the influence of GBs. The RSDs of retention time representing the memory performances are 54.7% and 41%, respectively. The RSDs of the single-layer ADG 1 T-DRAM and the 3-D stacked ADG 1 T-DRAM are 1.58% and 0.68%, respectively. The relative standard deviation (RSD) of the threshold voltages ( Vth) is depending on the location and the number of GBs. We studied the transfer characteristics and memory performances of the single-layer ADG 1 T-DRAMs and the 3-D stacked ADG 1 T-DRAMs and analyze the reliability depending on the location and the number of grain-boundaries (GBs). A poly-Si thin film was used within the device due to its low fabrication cost and feasibility in high-density three-dimensional (3-D) memory arrays. I also bought the Tower's FET selector as well The internet is great, but I still like to browse through specifications in a book now and then.In this paper, a capacitorless one-transistor dynamic random access memory (1 T-DRAM) based on a polycrystalline silicon (poly-Si) metal-oxide-semiconductor field-effect transistor with the asymmetric dual-gate (ADG) structure is designed and analyzed through a technology computer-aided design (TCAD) simulation. For GBP12, it's a bargain so I have placed an order. I just took a look on Amazon.the Tower's International Transistor Selector is still available The latest revision seems to be December 2008 and it includes SMT transistors. Some circuits just will not behave without a very close equivalent part. This is crucial for good equivalent selection. One thing I did learn all those years ago, was to read the schematic and decide how critical the components specifications were to correct operation. SMD stuff is too modern for it though so I then have to fall back to internet searches. The internet has changed searching for equivalents but I often find the Towers book faster as I grew up with it and know many favourite equivalent transistors. It lists the transistors specifications and any equivalent (but not all) You can flick through various ranges of transistors and select a suitably specified part. I still have my copy from the 1980's and it still serves me well. In the UK when I worked as a 'Saturday lad' in an electronics shop, I used the 'Towers Transistor selector' book.
![transistor cross references transistor cross references](https://alltransistors.com/adv/pdfdatasheet_st/image/mj2501_mj3001_0001.jpg)
Substitution of RF power devices needs to be approached with a great deal of caution,& preferably with a Spectrum Analyser on hand. Modern devices as a rule,are better spec'd than older ones,so a common modern type may replace an old special type. In more complex circuits,have a look at what devices other manufacturers use in similar circuits-there may be a common device which will do the job. If it is something simple,like a lamp,LED,or relay driver,you can probably replace it with a more common type without any drama. If you can't find a listed equivalent,one good philosophy is to look at the circuit the device is used in.
![transistor cross references transistor cross references](http://projectgics.com.ng/wp-content/uploads/2016/03/S9014-3-562x562.jpg)
Not only did they often disagree,but by the time you had tracked from one book to another,the specs on the final one you turned up were many times quite different to the original. At one of my earlier jobs,we had semiconductor equivalents book from several sources. Good luck finding anything that will do that!(though it must be out there somewhere) Many times the equivalents shown in the various books are harder to find than the original component.